absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -2.6 i d @ v gs = -12v, t c = 100c continuous drain current -1.6 i dm pulsed drain current ? -10.4 p d @ t c = 25c max. power dissipation 15 w linear derating factor 0.12 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 30 mj i ar avalanche current ? -2.6 a e ar repetitive avalanche energy ? 1.5 mj dv/dt p eak diode recovery dv/dt ? 6.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhf597110 power mosfet thru-hole (to-39) 12/03/03 www.irf.com 1 100v, p-channel technology product summary part number radiation level r ds(on) i d irhf597110 100k rads (si) 1.0 ? -2.6a irhf593110 300k rads (si) 1.0 ? -2.6a features: single event effect (see) hardened ultra low r ds(on) neutron tolerant identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed for footnotes refer to the last page to-39 pd - 94176c downloaded from: http:///
irhf597110 pre -irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 8.3 r thja junction-to-ambient 175 typical socket mount c/w note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -2.6 i sm pulse source current (body diode) ? -10.4 v sd diode forward voltage -5.0 v t j = 25c, i s = -2.6a, v gs = 0v ? t rr reverse recovery time 100 ns t j = 25c, i f = -2.6a, di/dt ? 100a/ s q rr reverse recovery charge 250 nc v dd -25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.13 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 1.2 ? v gs = -12v, i d = -2.6a resistance 1.0 v gs = -12v, i d = -1.6a v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 1.3 s ( )v ds > -15v, i ds = -1.6a ? i dss zero gate voltage drain current -10 v ds = -80v ,v gs =0v -25 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 11 v gs =-12v, i d = -2.6a q gs gate-to-source charge 3.0 nc v ds = -50v q gd gate-to-drain (miller) charge 4.0 t d (on) turn-on delay time 20 v dd = -50v, i d = -2.6a t r rise time 20 v gs =-12v, r g = 7.5 ? t d (off) turn-off delay time 30 t f fall time 95 l s + l d total inductance 7.0 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 370 v gs = 0v, v ds = -25v c oss output capacitance 100 p f f = 1.0mhz c rss reverse transf er capacitance 7.0 na ? ? nh ns a downloaded from: http:///
www.irf.com 3 pre-irradia tion irhf597110 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs = -20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -80v, v gs =0v r ds(on) static drain-to-source ? 0.916 0.916 ? v gs = -12v, i d =-1.6a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irhf5971102. part number irhf593110 v sd diode forward voltage ? -5.0 -5.0 v v gs = 0v, i s = -2.6a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. single event effect, safe operating area table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 ) (mev) (m) @v gs =0v @v gs =5v @ v gs =10v @v gs =15v @v gs =20v cu 28.0 285 43.0 -100 -100 -100 -70 -60 br 36.8 305 39.0 -100 -100 -70 - 50 -40 i 59.8 343 32.6 -60 -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i downloaded from: http:///
irhf597110 pre -irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 0.1 1 10 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -2.6a 1 10 100 5 6 7 8 9 10 11 v = -50v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j downloaded from: http:///
www.irf.com 5 pre-irradia tion irhf597110 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 100 200 300 400 500 600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0 2 4 6 8 10 12 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -2.6a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
-i d , drain-to-source current (a) ! "#$%!&%&'%$#"$ (%)%"*+# downloaded from: http:///
irhf597110 pre -irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f v gs 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) -i , drain current (a) c d downloaded from: http:///
www.irf.com 7 pre-irradia tion irhf597110 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v fig 13b. gate charge test circuit d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v v gs 25 50 75 100 125 150 0 10 20 30 40 50 60 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.2a -1.6a -2.6a downloaded from: http:///
irhf597110 pre -irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd =-25v, starting t j = 25c, l= 8.9 mh peak i l = -2.6a, v gs = -12v ? i sd -2.6a, di/dt -120a/ s, v dd -100v, t j 150c case outline and dimensions to-205af (modified to-39) footnotes: legend1- source 2- gate 3- drain ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/03 downloaded from: http:///
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